1 nm process

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In semiconductor manufacturing, the "1 nm process" represents the next significant milestone in MOSFET (metal–oxide–semiconductor field-effect transistor) scaling, succeeding the "2 nm" process node. It continues the industry trend of miniaturization in integrated circuit (IC) technology, which has been essential for improving performance, increasing transistor density, and reducing power consumption. The term "1 nanometer" has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors. According to the projections contained in the 2021 update of the International Roadmap for Devices and Systems (IRDS) published by the Institute of Electrical and Electronics Engineers (IEEE), a "1 nm node range label" is expected to have a contacted gate pitch of 42 nanometers and a tightest metal pitch of 16 nanometers. The first 1 nm chips are expected to be available in 2027. Liberty Times notes that TSMC’s Fab 25 at Central Taiwan Science Park is being developed as a 1.4nm hub, with four fabs planned. Piling work reportedly began in late 2025, risk production is expected by late 2027, and full-scale volume production is slated for the second half of 2028. Nikkei XTech reports that Rapidus schedules to begin developing its 1.4nm process technology in 2026 and aims to start mass production around 2029.