Dynamic random-access memory

Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell. A DRAM memory cell usually consists of a microscopic capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention, the data on the capacitor would soon be lost. To prevent this, DRAM requires an external memory refresh circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM) which does not require data to be refreshed. Unlike flash memory, DRAM is volatile memory (as opposed to non-volatile memory), since it loses its data quickly when power is removed. However, DRAM does exhibit limited data remanence. DRAM typically takes the form of an integrated circuit chip, which can consist of dozens to billions of DRAM memory cells. DRAM chips are widely used in digital electronics where low-cost, high-capacity computer memory is required. One of the largest applications for DRAM is the main memory (colloquially called the RAM) in modern computers and graphics cards (where the main memory is called the graphics memory). It is also used in many portable devices and video game consoles. In contrast, SRAM, which is faster and more expensive than DRAM, is typically used where speed is of greater concern than cost and size, such as the cache memories...